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MFG:N/A  Package Cooled:NA/  D/C:09+  

GA150KS61U Product Image

GA1 Series Datasheet download

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Part Number: GA150KS61U

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

Urgent Purchase

GA150KS61U Maximum Ratings

Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC@ TC = 25
Continuous Collector Current
150
A
ICM
Pulsed Collector Current
300
ILM Peak Switching Current
300
IFM Peak Diode Forward Current
300
V
VGE
Gate-to-Emitter Voltage
±20
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD@ TC = 25
Maximum Power Dissipation
440
W
PD@ TC = 85 Maximum Power Dissipation
260
TJ Operating Junction Temperature Range
-40 to +150
TSTG Storage Temperature Range
-40 to +125

GA150KS61U Features

• UltraFast:  Optimized for high operating frequencies 8-40 kHz in hard  
 
switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology

GA150KS61U datasheet

GA150KS61U
PDF/DataSheet Download

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