Purchase GA150KS61U, In-stock GA150KS61U From SeekIC.
MFG:N/A Package Cooled:NA/ D/C:09+

MFG:N/A Package Cooled:NA/ D/C:09+

|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Breakdown Voltage |
600 |
V |
|
IC@ TC = 25 |
Continuous Collector Current |
150 |
A |
|
ICM |
Pulsed Collector Current |
300 | |
| ILM | Peak Switching Current |
300 | |
| IFM | Peak Diode Forward Current |
300 |
V |
|
VGE |
Gate-to-Emitter Voltage |
±20 | |
| VISOL | RMS Isolation Voltage, Any Terminal To Case, t = 1 min |
2500 | |
|
PD@ TC = 25 |
Maximum Power Dissipation |
440 |
W |
| PD@ TC = 85 | Maximum Power Dissipation |
260 | |
| TJ | Operating Junction Temperature Range |
-40 to +150 |
|
| TSTG | Storage Temperature Range |
-40 to +125 |
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard
switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology
GA150KS61U
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