Purchase GA150TS60U, In-stock GA150TS60U From SeekIC.
MFG:IR D/C:2IGBT: 150A600V
- Table of contents:
GA150TS60U
-
Suppliers
DataSheet
General Description
GA150TS60U Maximum Ratings
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Voltage |
600 |
V |
|
IC@ TC = 25 |
Continuous Collector Current |
150 |
A |
|
ICM |
Pulsed Collector Current |
300 | |
| ILM | Peak Switching Current |
300 | |
| IFM | Peak Diode Forward Current |
300 | |
|
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
| VISOL | RMS Isolation Voltage, Any Terminal To Case, t = 1 min |
2500 | |
|
PD@ TC = 25 |
Maximum Power Dissipation |
440 |
W |
| PD@ TC = 100 | Maximum Power Dissipation |
230 | |
| TJ | Operating Junction Temperature Range |
-40 to +150 |
|
| TSTG | Storage Temperature Range |
-40 to +125 |
GA150TS60U Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard
switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology
switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology
GA150TS60U
PDF/DataSheet Download
- Datasheet: GA150TS60U
- File Size: 226862 KB
- Manufacturer: ICST [Integrated Circuit Systems]
- Click here to Download
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