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GA150TS60U

Features: • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™ antiparallel diodes with ultra- soft recovery• Industry standard package• UL approved...

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SeekIC No. : 004347072 Detail

GA150TS60U: Features: • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™ ...

GA150TS60U Data Sheet

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Part Number:
GA150TS60U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• UltraFast:  Optimized for high operating frequencies 8-40 kHz in hard
   switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology


Specifications
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC@ TC = 25
Continuous Collector Current
150
A
ICM
Pulsed Collector Current
300
ILM Peak Switching Current
300
IFM Peak Diode Forward Current
300
VGE
Gate-to-Emitter Voltage
±20
V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD@ TC = 25
Maximum Power Dissipation
440
W
PD@ TC = 100 Maximum Power Dissipation
230
TJ Operating Junction Temperature Range
-40 to +150
TSTG Storage Temperature Range
-40 to +125



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