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MFG:IR  Package Cooled:Dual INT-A-Pak  D/C:05+  

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GA1 Series Datasheet download

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Part Number: GA150TD120U

 

MFG: IR

Package Cooled: Dual INT-A-Pak

D/C: 05+

 

Urgent Purchase

GA150TD120U Maximum Ratings

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
1200
V
IC @ TC = 25°C Continuous Collector Current
150
A
ICM Pulsed Collector CurrentÅ
300
ILM Peak Switching CurrentÇ
300
IFM Peak Diode Forward Current
300
VGE Gate-to-Emitter Voltage
±20
V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD @ TC = 25°C Maximum Power Dissipation
780
W
PD @ TC = 85°C Maximum Power Dissipation
406
TJ Operating Junction Temperature Range
-40to+150
°C
TSTG Storage Temperature Range
-40to+125

GA150TD120U Features

• Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology

GA150TD120U Typical Application

• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing

GA150TD120U datasheet

GA150TD120U
PDF/DataSheet Download

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