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MFG:IR  Package Cooled:Dual INT-A-Pak  D/C:05+  

GA250TD120U Product Image

GA2 Series Datasheet download

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Part Number: GA250TD120U

 

MFG: IR

Package Cooled: Dual INT-A-Pak

D/C: 05+

 

Urgent Purchase

GA250TD120U Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC=25°C Continuous Collector Current 250 A
ICM Pulsed Collector Current 500
ILM Peak Switching Current‚ 500
IFM Peak Diode Forward Current 500
VGE Gate-to-Emitter Voltage ±20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
PD @ TC=25°C Maximum Power Dissipation 1050 W
PD @ TC=85°C Maximum Power Dissipation 650
TJ Operating Junction Temperature Range -40 to +150 °C
TSTG Storage Temperature Range -40 to +125

GA250TD120U Features

• Generation 4 IGBT technology
• Standard:  Optimized for minimum saturation  voltage and  operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED antiparallel diodes with ultra- soft  recovery
• Industry standard package
• UL approved

GA250TD120U Typical Application

• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,  SMPS, Welding
• Lower EMI, requires less snubbing

GA250TD120U datasheet

GA250TD120U
PDF/DataSheet Download

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