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GA250TD120U

Features: • Generation 4 IGBT technology• Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz• Very low conduction and switching losses• HEXFRED™antiparallel diodes with ultra- soft recovery• Industry standard package• ...

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SeekIC No. : 004347078 Detail

GA250TD120U: Features: • Generation 4 IGBT technology• Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz• Very low conduction and switching losses• ...

GA250TD120U Data Sheet

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Part Number:
GA250TD120U
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Features:

• Generation 4 IGBT technology
• Standard:  Optimized for minimum saturation  voltage and  operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft  recovery
• Industry standard package
• UL approved


Application

• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,  SMPS, Welding
• Lower EMI, requires less snubbing


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC=25°C Continuous Collector Current 250 A
ICM Pulsed Collector Current 500
ILM Peak Switching Current‚ 500
IFM Peak Diode Forward Current 500
VGE Gate-to-Emitter Voltage ±20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
PD @ TC=25°C Maximum Power Dissipation 1050 W
PD @ TC=85°C Maximum Power Dissipation 650
TJ Operating Junction Temperature Range -40 to +150 °C
TSTG Storage Temperature Range -40 to +125



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