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Part Number: GAL16V8

 

 

Package Cooled: 800

 

Description: The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with E...


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GAL16V8 General Description


The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently.

The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. An important subset of the many architecture configurations possible with the GAL16V8 are the PAL architectures listed in the table of the macrocell description section. GAL16V8 devices are capable of emulating any of these PAL architectures with full fun ction/fuse map/parametric compatibility.

Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.

GAL16V8 Maximum Ratings

Supply voltage VCC ...................................... 0.5 to +7V
Input voltage applied ......................... 2.5 to VCC +1.0V
Off-state output voltage applied ........ 2.5 to VCC +1.0V
Storage Temperature ............................... 65 to 150°C
Ambient Temperature with
Power Applied .......................................... 55 to 125°C
1.Stresses above those listed under the "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress only ratings and functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications).

GAL16V8 Features

• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
- 3.5 ns Maximum Propagation Delay
- Fmax = 250 MHz
- 3.0 ns Maximum from Clock Input to Data Output
- UltraMOS® Advanced CMOS Technology
• 50% to 75% REDUCTION IN POWER FROM BIPOLAR
- 75mA Typ Icc on Low Power Device
- 45mA Typ Icc on Quarter Power Device
• ACTIVE PULL-UPS ON ALL PINS
• E2 CELL TECHNOLOGY
- Reconfigurable Logic
- Reprogrammable Cells
- 100% Tested/100% Yields
- High Speed Electrical Erasure (<100ms)
- 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
- Maximum Flexibility for Complex Logic Designs
- Programmable Output Polarity
- Also Emulates 20-pin PAL® Devices with Full
Function/Fuse Map/Parametric Compatibility
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
- 100% Functional Testability
• APPLICATIONS INCLUDE:
- DMA Control
- State Machine Control
- High Speed Graphics Processing
- Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION

GAL16V8 Connection Diagram

GAL16V8  Connection Diagram

GAL16V8 datasheet

GAL16V8
PDF/DataSheet Download

  • Datasheet: GAL16V8
  • File Size: 323584 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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  • ·GAL16LV8
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  • ·GAL16LV8D-3LJ
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  • ·GAL16LV8D-5LJ
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  • ·GAL16LV8ZD
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  • ·GAL16V8-10LNC 
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