GAL16V8D-10LPN

The GAL16V8D-10LPN,at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market.

Features of the GAL16V8D-10LPN are:(1)high performance E2CMOS technology;(2)50% to 75% reduction in power from bipolar;(3)active pull-ups on all pins;(4)E2CELL technology;(5)eight output logic macrocells;(6)preload and power-on reset of all registers;(7)applications include;(8)electronic signature for identification;(9)lead-free package options.

The absolute maximum ratings of the GAL16V8D-10LPN can be summarized as:(1):the parameter is supply voltage VCC,the rating is -0.5 to +7,the unit is V;(2):the parameter is input voltage applied,the rating is -2.5 to VCC+1.0,the unit is V;(3):the parameter is off-state output voltage applied,the rating is -2.5 to VCC+1.0,the unit is V;(4):the parameter is storage temperature,the rating is -65 to 150,the unit is ;(5):the parameter is ambient temperature with power applied,the rating is -55 to 125,the unit is .