MFG:N/A Package Cooled:CDIP D/C:N/A
MFG: N/A
Package Cooled: CDIP
D/C: N/A
Description: The GAL20RA10 combines a high performance CMOS process with electrically erasable (E2) floa...
The GAL20RA10 combines a high performance CMOS process with electrically erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. Lattice Semiconductor's E2CMOS circuitry achieves power levels as low as 75mA typical ICC which represents a substantial savings in power when compared to bipolar counterparts. E2 technology offers high speed (<100ms) erase times providing the ability to reprogram,
reconfigure or test the devices quickly and efficiently.
The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. The GAL20RA10 is a direct parametric compatible CMOS replacement for the PAL20RA10 device.
Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacturing. Therefore, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.
GAL20RA10
PDF/DataSheet Download
The GAL20LV8ZD, at 100 µA standby current and 15ns propagation delay provides the highest speed low-voltage PLD available in the market. The GAL20LV8ZD is manufactured using Lattice Semiconductor's advanced 3.3V E2 CMOS process, which com- bines CMOS w...
The GAL20LV8D, at 3.5 ns maximum propagation delay time, provides the highest speed performance available in the PLD market. The GAL20LV8D is manufactured using Lattice Semiconductor's advanced 3.3V E2CMOS process, which combines CMOS with Electrically Erasa...
The GAL18V10, at 7.5 ns maximum propagation delay time, com- bines a high performance CMOS process with Electrically Eras- able (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power...
The GAL16VP8, with 64 mA drive capability and 15 ns maximum propagation delay time is ideal for Bus and Memory control applications. The GAL16VP8 is manufactured using Lattice Semiconductor's advanced E2CMOS process which combines CMOS with Electrically Eras...
The GAL16V8Z and GAL16V8ZD, at 100 µA standby current and 12ns propagation delay provides the highest speed and lowest power combination PLD available in the market. The GAL16V8Z/ ZD is manufactured using Lattice Semiconductor's advanced zero power E2 ...
The GAL16V8Z and GAL16V8ZD, at 100 µA standby current and 12ns propagation delay provides the highest speed and lowest power combination PLD available in the market. The GAL16V8Z/ ZD is manufactured using Lattice Semiconductor's advanced zero power E2 ...
Price: 1-10 USD
power field effect transistor, TO220F, 600 V, Low gate charge, Fast switching
Price: 4.5-5 USD
E1/T1/J1 Framer and Line Interface Component for Long and Short Haul Applications - Infineon Techn...
Price: 0.6-0.89 USD
DIP-8, high-speed CAN, fault-tolerant transceiver, 7.0V, Low current standby operation
Price: 0.001-0.002 USD
Murata Multilayer Ceramic Capacitors, 10000PF, 50V, High Dielectric Constant Type
Price: 17-19 USD
QFP, digital signal processor, CMOS
Price: 1.1-2.11 USD
Single channel high side driver, low stand-by current, low electromagnetic susceptibility, 41V, SOP
Price: 40-70 USD
DP10F1200T101610, Semiconductor Modules, eupec GmbH
Price: 0.1-100 USD
thyristor module, 2300A, 200 A/μ, 800V, 10W, PK90F80, SanRex
Price: 1.5-3.5 USD
static RAM, TSOP, 4-Mbit
Price: 11.5-15 USD
Thyristor Modules, Diode Modules, Isolation voltage 3600 V, 10 W, 100 A
Price: 1-1.8 USD
8-Bit Flash Microcontroller, 12-Bit Wide Instructions, SOP8, 4 MHz Precision Internal Oscillator
Price: 3.85-5.85 USD
XC95288 In-System Programmable CPLD IC CPLD SPEED GRADE 208-HQFP/COM - XC95288-15HQ208C
