GB50NA120UX

DescriptionThe GB50NA120UX is designed as one kind of high side chopper IGBT SOT-227 (ultrafast IGBT) with current of 50A. GB50NA120UX is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.GB50NA120UX ...

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SeekIC No. : 004347155 Detail

GB50NA120UX: DescriptionThe GB50NA120UX is designed as one kind of high side chopper IGBT SOT-227 (ultrafast IGBT) with current of 50A. GB50NA120UX is designed for increased operating efficiency in power conve...

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Part Number:
GB50NA120UX
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Description

The GB50NA120UX is designed as one kind of "high side chopper" IGBT SOT-227 (ultrafast IGBT) with current of 50A. GB50NA120UX is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.

GB50NA120UX has ten features. (1)NPT generation V IGBT technology. (2)Square RBSOA. (3)HEXFRED clamping diode. (4)Positive Vce(on) temperature coefficient. (5)Fully isolated package. (6)Speed 8kHz to 60kHz. (7)Very low internal inductance (<=5nH typical). (8)Industry standard outline. (9)UL approved file E78996. (10)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of GB50NA120UX have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)ts continuous collector current would be 84A at Tc=25°C and would be 57A at Tc=80°C. (3)Its pulsed collector current would be 150A. (4)Its clamped inductive load current would be 150A. (5)Its diode continuous forward current would be 76A at Tc=25°C and would be 52A at Tc=80°C. (6)Its gate to emitter voltage would be +/-20V. (7)Its IGBT power dissipation would be 431W at Tc=25°C and would be 242W at Tc=80°C. (8)Its diode power dissipation would be 278W at Tc=25°C and would be 156W at Tc=80°C. (9)Its RMS isolation voltage would be 2500V any terminal to case, t=1 min. And so on. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB50NA120UX are concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its gate threshold voltage would be min 4V and typ 5V. (3)Its temperature coefficient of threshold voltage would be typ -10mV/°C. (4)Its collector to emitter voltage would be typ 2.46V at Vge=15V and Ic=25A. And so on. If you have any question or suggestion or want to know more about GB50NA120UX please contact us for details. Thank you!




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