GB50XF120K

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Package / Case : Econo 2
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 75 A
Packaging : Bulk


Description

The GB50XF120K is designed as one kind of IGBT sixpack modules.

GB50XF120K has eight features. (1)Low Vce(on) non punch through IGBT technology. (2)Low diode VF. (3)10us short circuit capability. (4)Square RBSOA. (5)HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics. (6)Positive Vce(on) temperature coefficient. (7)Veramic DBC substrate. (8)Low stray inductance design. Those are all the main features.

Some absolute maximum ratings of GB50XF120K have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 75A at 25°C and it would be 50A at 80°C. (3)Its pulsed collector current would be 150A. (4)Its clamped inductive load current would be 150A. (5)Its diode continuous forward current would be 75A at 25°C and it would be 50A at 80°C. (6)Its pulsed diode maixmum forward current. (7)Its gate to emitter voltage would be +/-20V. (8)Its maximum power dissipation (IGBT and diode) would be 329W at 25°C and would be 184W at 80°C. (9)Its maximum operating junction temperature would be 150°C. (10)Its storage temperature range would be from -40°C to 125°C. (11)Its isolation voltage would be min AC 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB50XF120K are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its temperature coefficient of breakdown voltage would be typ 0.31V/°C. (3)Its collector to emitter voltage would be typ 2.45V and max 2.65V with conditions of Ic=50A and Vge=15V. (4)Its gate threshold voltage would be min 4.0V and typ 4.9V and max 6.0V. (5)Its thresold voltage temperature coefficient would be typ -12mV/°C. (6)Its zero gate voltage collector current would be max 100uA. And so on. If you have any question or suggestion or want to know more information about GB50XF120K please contact us for details. Thank you!