GB50RF60K

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Configuration : Array 7
Maximum Operating Temperature : + 150 C
Package / Case : Econo 2
Continuous Collector Current at 25 C : 80 A
Packaging : Bulk


Description

The GB50RF60K is designed as one kind of IGBT PIM modules with current of 48A. GB50RF60K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals and low junction to case thermal resistance.

GB50RF60K has eleven features. (1)Low Vce(on) non punch through IGBT technology. (2)Low diode Vf. (3)10s short circuit capability. (4)Square RBSOA. (5)HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics. (6)Positive Vce(on) temperature coefficient. (7)Ceramic DBC substrate. (8)Low stray inductance design. (9)Speed 8 to 60kHz. (10)Totally lead (Pb)-free. (11)Designed and qualified for industrial market. Those are all the main features.

Some absolute maximum ratings of GB50RF60K have been concluded into several points as follow. (1)For the inverter its collector to emitter voltage would be 600V. (2)Its gate to emitter voltage would be +/-20V. (3)Its continuous collector current would be 80A at Tc=25°C and would be 48A at Tc=80°C. (4)Its pulse collector current would be 160A. (5)Its diode maximum forward current would be 160A. (6)Its power dissipation would be 215W at 25°C for one IGBT. (7)For the input rectifier its repetitive peak reverse voltage would be 800V. (8)Its average output current would be 50A. (9)Its surge current (non-repetitive) would be 310A. (10)Its I2t (non-repetitive) would be 525A2s. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB50RF60K for inverter IGBT are concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coefficient of breakdown voltage would be typ 0.73V/°C. (3)Its gate threshold voltage would be min 3.5V and max 5.5V. (4)Its collector to emitter voltage would be typ 2.00V and max 2.58V at Tc=50A and Vge=15V. And so on. If you have any question or suggestion about GB50RF60K please contact us for details. Thank you!