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Description: The GS71108A is a high speed CMOS Static RAM organized as 131,072 words by 8 bits. Static design elimi...


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GS71108ATP General Description


The GS71108A is a high speed CMOS Static RAM organized as 131,072 words by 8 bits. Static design eliminates the need for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTL-compatible. The GS71108A is available in a 6 mm x 8 mm Fine Pitch BGA package, as well as in 300 mil and 400 mil SOJ and 400 mil TSOP Type-II packages.

GS71108ATP Maximum Ratings

Parameter Symbol Rating Unit
Supply Voltage VDD 0.5 to +4.6 V
Input Voltage VIN 0.5 to VDD +0.5 ( 4.6 V max.) V
Output Voltage VOUT 0.5 to VDD +0.5 ( 4.6 V max.) V
Allowable power dissipation PD 0.7 W
Storage temperature TSTG 55 to 150

Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

GS71108ATP Features

• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 140/120/95/80 mA at minimum cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: 40 to 85
• Package line up
   J: 400 mil, 32-pin SOJ package
   GJ :RoHS-compliant 400 mil, 32-pin SOJ package
   TP: 400 mil, 32-pin TSOP Type II package
   GP:RoHS-compliant 400 mil, 32-pin TSOP Type II package
   SJ: 300 mil, 32-pin SOJ package
   U: 6 mm x 8 mm Fine Pitch Ball Grid Array package
   GU:RoHS-compliant 6 mm x 8 mm Fine Pitch Ball Grid Array package

GS71108ATP Connection Diagram

GS71108ATP  Connection Diagram

GS71108ATP datasheet

GS71108ATP
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