GS880Z1836T-66

Features: • 512K x 18 and 256K x 36 configurations• User configurable Pipeline and Flow Through mode• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization• Fully pin compatible with both pipelined and flow through NtRAM™, NoBL™...

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SeekIC No. : 004356188 Detail

GS880Z1836T-66: Features: • 512K x 18 and 256K x 36 configurations• User configurable Pipeline and Flow Through mode• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus ut...

floor Price/Ceiling Price

Part Number:
GS880Z1836T-66
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• 512K x 18 and 256K x 36 configurations
• User configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization
• Fully pin compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• Pin compatible with 2M, 4M and 16M (future) devices
• 3.3 V +10%/5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• Clock Control, registered address, data, and control
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package



Pinout

  Connection Diagram


Specifications

Symbol Description
Value
Unit
VDD Voltage on VDD Pins
0.5 to 4.6
V
VDDQ Voltage in VDDQ Pins
0.5 to VDD
V
VCK Voltage on Clock Input Pin
0.5 to 6
V
VI/O Voltage on I/O Pins
0.5 to VDDQ +0.5 (4.6 V max.)
V
VIN Voltage on Other Input Pins
0.5 to VDD +0.5 ( 4.6 V max.)
V
IIN Input Current on Any Pin
+/20
mA
IOUT Output Current on Any I/O Pin
+/20
mA
PD Package Power Dissipation
1.5
W
TSTG Storage Temperature
55 to 125
oC
TBIAS Temperature Under Bias
55 to 125
oC

Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component




Description

The GS880Z18/36T is an 8Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the GS880Z18/36T is switched from read to write cycles.

Because GS880Z18/36T is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous of GS880Z18/36T inputs include the sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. GS880Z18/36T feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.

The GS880Z18/36T may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the GS880Z18/36T incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.

The GS880Z18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDECstandard
100-pin TQFP package.




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