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Part Number: GS881Z18

 

 

 

 

Description: The GS881Z18/36AT is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other ...


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GS881Z18 General Description


The GS881Z18/36AT is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.

Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable, ZZ and Output Enable. Output Enable can be used to override the synchronous control of the output drivers a nd turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.

The GS881Z18/36AT may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edgetriggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.

The GS881Z18/36AT is implemented with GSI's high performance CMOS technology and is available in a JEDECstandard 100-pin TQFP package.

GS881Z18 Maximum Ratings

SYMBOL
PARAMETER
Value
UNIT
VDD
Voltage on VDD Pins
0.5 to 2.9
V
VDDQ
Voltage in VDDQ Pins
0.5 to VDD
V
VI/O
Voltage on I/O Pins
0.5 to VDDQ +0.5 ( 4.6 V max.)
V
VIN
Voltage on Other Input Pins
0.5 to VDDQ +0.5 ( 4.6 V max.)
V
IIN
Input Current on Any Pin
+/100
mA
Iout
Output Current on Any I/O Pin
+/-100
mA
PD
Package Power Dissipation
1.5
W
TSTG
storage temperature
-55 to 125
TBIAS
Temperature Under Bias
-55 to 125



Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.

GS881Z18 Features

• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 100-lead TQFP package

GS881Z18 Connection Diagram

GS881Z18  Connection Diagram

GS881Z18 datasheet

GS881Z18AT
PDF/DataSheet Download

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