Features: ·Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.)·Complementary to GSMBT4075Specifications Parameter Symbol Rating Unit Junction Temperature Tj +150 Storage Temperature Tstg -55~+150 Collector to Base Voltage VCBO -50 V Collector to Emitter Volt...
GSMBT2014: Features: ·Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.)·Complementary to GSMBT4075Specifications Parameter Symbol Rating Unit Junction Temperature Tj +150 Storage T...
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Parameter | Symbol | Rating | Unit |
Junction Temperature | Tj | +150 | |
Storage Temperature | Tstg | -55~+150 | |
Collector to Base Voltage | VCBO | -50 | V |
Collector to Emitter Voltage | VCEO | -50 | V |
Emitter to Base Voltage | VEBO | -5 | V |
Collector Current | IC | -150 | mA |
Base Current | IB | -30 | mA |
Total Power Dissipation | PD | 225 | mW |