GT100NA120UX

The GT100NA120UX is designed as one kind of "high side chopper" IGBT SOT-227 (trench IGBT) with current of 100A. It is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating, and it would be easy to assemble and parallel.

It has eleven features. (1)Trench IGBT technology. (2)Very low Vce(on). (3)Square RBSOA. (4)HEXFRED clamping diode. (5)10s short circuit capability. (6)Fully isolated package. (7)Speed 4kHz to 30kHz. (8)Very low internal inductance (<=5nH typical). (9)Industry standard outline. (10)UL approved file E78996. (11)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 134A at Tc=25°C and would be 92A at Tc=80°C. (3)Its pulsed collector current would be 270A. (4)Its clamped inductive load current would be 270A. (5)Its diode continuous forward current would be typ 87A at Tc=25°C and would be 59A at Tc=80°C. (6)Its gate to emitter voltage would be +/-20V. (7)Its IGBT power dissipation would be 463W at Tc=25°C and would be 260W at Tc=80°C. (8)Its diode power dissipation would be 338W at Tc=25°C and would be 190W at Tc=80°C. (9)Its RMS isolation voltage would be 2500V. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its collector to emitter voltage would be typ 1.79V and max 2.33V at Vge=15V and Ic=50A and would be typ 2.36V and max 2.85V at Vge=15V and Ic=100A. (3)Its gate threshold voltage would be min 5V and typ 5.8V and max 7V. (4)Its temperature coefficient of threshold voltage would be typ -15.6mV/°C. And so on. If you have any question or suggestion please contact us for details. Thank you!