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Part Number: GT10G131

 

 

 

 

 

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GT10G131 Maximum Ratings

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 400 V
Gate-emitter voltage DC VGES ± 6 V
Pulse VGES ± 8 V
Collector current Pulse
(Note 1)
ICP 200 A
Collector power
dissipation(t=10 s)
(Note 2a) PC (1) 1.9 W
Note 2b) PC (2) 1.0 W
Junction temperature Tj 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT10G131 Typical Application

• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
• Peak collector current: IC = 200 A (max)
• Built-in zener diode between gate and emitter
• SOP-8 package

GT10G131 datasheet

GT10-16DP-DS
PDF/DataSheet Download

Find GT10G131 Suppliers

  • ·GT10-16DP-HU
  • HIROSE [Hirose Electric] 
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  • HIROSE [Hirose Electric] 
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  • ·GT10-16DS-HU
  • HIROSE [Hirose Electric] 
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  • ·GT10-2022PCF
  • HIROSE [Hirose Electric] 
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  • HIROSE [Hirose Electric] 
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  • HIROSE [Hirose Electric] 
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