IGBT Transistors IGBT, 400V, 200A
GT10G131(TE12L,Q): IGBT Transistors IGBT, 400V, 200A
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DescriptionThe GT100DA120U is designed as one kind of insulated gate bipolar transistors (trench I...
DescriptionThe GT100DA60U is designed as one kind of insulated gate bipolar transistors (trench IG...
| Technical/Catalog Information | GT10G131(TE12L,Q) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | - |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4V @ 200A |
| Power - Max | 1W |
| Mounting Type | Surface Mount |
| Package / Case | * |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | GT10G131 TE12L,Q GT10G131TE12L,Q |