Purchase GT10J312, In-stock GT10J312 From SeekIC.
MFG:TOHSIBA Package Cooled:TO-
- Table of contents:
GT10J312
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Suppliers
DataSheet
General Description
GT10J312 Maximum Ratings
|
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | |
| Collector−Emitter Voltage |
VCES |
600 |
V | |
| Gate−Emitter Voltage |
VGES |
±20 |
V | |
| Collector Current | DC |
IC |
10 |
A |
| 1ms |
ICP |
20 |
A | |
| Emitter−Collector Forward Current |
DC |
IF |
10 |
A |
| 1ms |
IFM |
20 |
A | |
| Collector Power Dissipation (Tc = 25) |
PC |
60 |
W | |
| Junction Temperature |
Tj |
150 |
||
| Storage Temperature Range |
Tstg |
-55~150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT10J312 Features
* Third-generation IGBT
* Enhancement mode type
* High speed : tf = 0.30s (Max.)
* Low saturation voltage : VCE (sat) = 2.7V (Max.)
* FRD included between emitter and collector
* Enhancement mode type
* High speed : tf = 0.30s (Max.)
* Low saturation voltage : VCE (sat) = 2.7V (Max.)
* FRD included between emitter and collector
GT10J312
PDF/DataSheet Download
- Datasheet: GT10J312
- File Size: 302207 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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