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MFG:TOS  Package Cooled:TO-263  D/C:05+  

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Part Number: GT10J312SM

 

MFG: TOS

Package Cooled: TO-263

D/C: 05+

 

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GT10J312SM Maximum Ratings

CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
VCES
600
V
Gate−Emitter Voltage
VGES
±20
V
Collector Current DC
IC
10
A
1ms
ICP
20
A
Emitter−Collector Forward
Current
DC
IF
10
A
1ms
IFM
20
A
Collector Power Dissipation
(Tc = 25)
PC
60
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT10J312SM Features

* Third-generation IGBT
* Enhancement mode type
* High speed : tf = 0.30s (Max.)
* Low saturation voltage : VCE (sat) = 2.7V (Max.)
* FRD included between emitter and collector

GT10J312SM datasheet

GT10-16DP-DS
PDF/DataSheet Download

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