IGBT Transistors IGBT, 600V, 10A
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Maximum Gate Emitter Voltage : | 20 V | Maximum Operating Temperature : | + 150 C |
| Package / Case : | TO-220SM-3 |
| Technical/Catalog Information | GT10J312(Q) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 10A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 60W |
| Mounting Type | Through Hole |
| Package / Case | 2-10S1C |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | GT10J312 Q GT10J312Q |