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GT10J312(Q)

IGBT Transistors IGBT, 600V, 10A

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SeekIC No. : 00144050 Detail

GT10J312(Q): IGBT Transistors IGBT, 600V, 10A

GT10J312(Q) Data Sheet

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Part Number:
GT10J312(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220SM-3    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Package / Case : TO-220SM-3


Parameters:

Technical/Catalog InformationGT10J312(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)10A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max60W
Mounting TypeThrough Hole
Package / Case2-10S1C
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT10J312 Q
GT10J312Q



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