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MFG:TOHSIBA Package Cooled:TO-
- Table of contents:
GT10J321
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Suppliers
DataSheet
General Description
GT10J321 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 600 | V | |
| Gate-emitter voltage | VGES | ±25 | V | |
| Continuous Collector current |
@ Tc = 100 | IC | 5 | A |
| @ Tc = 25 | 10 | |||
| Pulsed collector current | ICP | 20 | A | |
| Diode forward current | DC | IF | 10 | A |
| Pulsed | IFP | 20 | ||
| Collector power dissipation |
@ Tc = 100 | PC | 11 | W |
| @ Tc = 25 | 29 | |||
| Junction temperature | Tj | 150 | ||
| Storage temperature range | Tstg | −55~150 | ||
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
GT10J321 Typical Application
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.03 s (typ.)
• Low switching loss : Eon = 0.26 mJ (typ.)
: Eoff = 0.18 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.03 s (typ.)
• Low switching loss : Eon = 0.26 mJ (typ.)
: Eoff = 0.18 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
GT10J321
PDF/DataSheet Download
- Datasheet: GT10J321
- File Size: 162505 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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