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MFG:TOHSIBA Package Cooled:TO-
- Table of contents:
GT40G121
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Suppliers
DataSheet
General Description
GT40G121 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 400 | V | |
| Gate-emitter voltage | VGES | ±25 | V | |
| Collector current | DC | IC | 40 | A |
| 1 ms | ICP | 100 | ||
| Collector power dissipation | PC | 100 | W | |
| Junction temperature | Tj | 150 | °C | |
| Storage temperature range | Tstg | -55~150 °C | °C | |
GT40G121 Typical Application
Enhancement-mode
High speed: tf = 0.30 µs (typ.) (IC= 60 A)
Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
GT40G121 Connection Diagram
GT40G121
PDF/DataSheet Download
- Datasheet: GT40G121
- File Size: 154988 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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