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GT40Q323

Application• Enhancement-mode• High speed: tf = 0.14 s (typ.) (IC = 40A)• FRD included between emitter and collector• 4th generation• TO-3P (N) (Toshiba package name)Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES ...

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SeekIC No. : 004357036 Detail

GT40Q323: Application• Enhancement-mode• High speed: tf = 0.14 s (typ.) (IC = 40A)• FRD included between emitter and collector• 4th generation• TO-3P (N) (Toshiba package name)Sp...

GT40Q323 Data Sheet

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Part Number:
GT40Q323
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Application

• Enhancement-mode
• High speed: tf = 0.14 s (typ.) (IC = 40A)
• FRD included between emitter and collector
• 4th generation
• TO-3P (N) (Toshiba package name)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±25
V
Continuous collector
current		 @ Tc = 100
IC
20
A
@ Tc = 25
39
Pulsed collector current
ICP
80
A
Diode forward current DC
IF
10
A
Pulsed
IFP
80
Collector power
dissipation		 @ Tc = 100
PC
80
W
@ Tc = 25
200
Junction temperature
Tj
150
Storage temperature range
Tstg
−55 to 150



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