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GT40Q323(Q)

IGBT Transistors IGBT 1200V 39A

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SeekIC No. : 00143930 Detail

GT40Q323(Q): IGBT Transistors IGBT 1200V 39A

GT40Q323(Q) Data Sheet

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Part Number:
GT40Q323(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 25 V Continuous Collector Current at 25 C : 39 A
Maximum Operating Temperature : + 150 C Package / Case : TO-3PN-3    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Maximum Operating Temperature : + 150 C
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 25 V
Package / Case : TO-3PN-3
Continuous Collector Current at 25 C : 39 A


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