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MFG:TOSHIBA Package Cooled:TO-3P
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GT40T301
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DataSheet
General Description
GT40T301 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 1500 | V | |
| Gate-emitter voltage | VGES | ±25 | V | |
| Collector current | DC | IC | 40 | A |
| 1 ms | ICP | 80 | A | |
| Emitter-collector forward current |
DC | IECF | 30 | A |
| 1 ms | IECPF | 80 | A | |
| Collector power dissipation (Tc = 25°C) |
PC | 200 | W | |
| Junction temperature | Tj | 150 | ||
| Storage temperature range | Tstg | −55~150 | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT40T301 Features
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = −20 A/s)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
• Enhancement mode type
• High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = −20 A/s)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
GT40T301
PDF/DataSheet Download
- Datasheet: GT40T301
- File Size: 318688 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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