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GT50J102(Q)

IGBT Transistors IGBT 600V 50A

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SeekIC No. : 00143683 Detail

GT50J102(Q): IGBT Transistors IGBT 600V 50A

GT50J102(Q) Data Sheet

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Part Number:
GT50J102(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-3P Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Package / Case : TO-3P
Packaging : Bulk


Parameters:

Technical/Catalog InformationGT50J102(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 50A
Power - Max200W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT50J102 Q
GT50J102Q



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