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GT50J121(Q)

IGBT Transistors 600V/50A DIS

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SeekIC No. : 00142618 Detail

GT50J121(Q): IGBT Transistors 600V/50A DIS

GT50J121(Q) Data Sheet

floor Price/Ceiling Price

US $ 3.46~5.76 / Piece | Get Latest Price
Part Number:
GT50J121(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $5.76
  • $4.61
  • $3.92
  • $3.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Continuous Collector Current at 25 C : 50 A
Maximum Operating Temperature : + 150 C Package / Case : TO-3P
Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Continuous Collector Current at 25 C : 50 A
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-3P
Packaging : Bulk


Parameters:

Technical/Catalog InformationGT50J121(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 50A
Power - Max240W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT50J121 Q
GT50J121Q



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