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Part Number: GT50J121

 

MFG: TOHSIBA

Package Cooled: TO-

 

 

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GT50J121 Maximum Ratings

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VEBS
±20
V
Collector current
DC
IC
50
A
1 ms
ICP
100
Collector power dissipation
(Tc = 25)
PC
240
W
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT50J121 Features

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.05 s (typ.)
• Low switching loss : Eon = 1.30 mJ (typ.)
                                 : Eoff = 1.34 mJ (typ.)
• Low saturation Voltage: VCE (sat) = 2.0 V (typ.)

GT50J121 datasheet

GT50J121
PDF/DataSheet Download

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