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GT50J122

Features: • Enhancement mode type• High speed : tf = 0.16 s (typ.) (IC = 60A)• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)• Fourth-generation IGBT• TO-3P(N) (Toshiba package name)Specifications Characteristics Symbol Rating Unit Coll...

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GT50J122: Features: • Enhancement mode type• High speed : tf = 0.16 s (typ.) (IC = 60A)• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)• Fourth-generation IGBT• TO-3...

GT50J122 Data Sheet

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Part Number:
GT50J122
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Enhancement mode type
• High speed : tf = 0.16 s (typ.) (IC = 60A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
• Fourth-generation IGBT
• TO-3P(N) (Toshiba package name)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±25
V
Continuous collector current @ Tc = 100
@ Tc = 25
IC
31
50
A
Pulsed collector current
ICP
120
A
Collector power dissipation @ Tc = 100
@ Tc = 25
PC
62
156
W
Junction temperature
Tj
150
Storage temperature range
Tstg
−55 to 150



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