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GT50J325

Features: • Fourth generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference)• High speed: tf = 0.05 s (typ.)• Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.)• Low saturation Voltage: VCE (sat) = 2...

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GT50J325: Features: • Fourth generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference)• High speed: tf = 0.05 s (typ.)• Low switch...

GT50J325 Data Sheet

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Part Number:
GT50J325
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/21

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Product Details

Description



Features:

• Fourth generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.05 s (typ.)
• Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.)
• Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector


Specifications

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 50 A
1 ms ICP 100
Emitter-collector forward current DC IF 50 A
1 ms IFM 100
Collector power dissipation
(Tc = 25)		 PC 240 W
Junction temperature Tj 150
Storage temperature range Tstg −55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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