Purchase GT50J327, In-stock GT50J327 From SeekIC.
- Table of contents:
GT50J327
-
Suppliers
DataSheet
General Description
GT50J327 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit |
| Collector-emitter voltage |
VCES |
600 |
V |
| Gate-emitter voltage |
VGES |
±25 |
V |
| Continuous collector @ Tc = 100 current @ Tc = 25 |
IC |
29 |
A |
|
50 | |||
| Pulsed collector current |
ICP |
100 |
A |
| Diode forward current DC Pulsed |
IF |
20 |
A |
|
IFP |
40 | ||
| Collector power @ Tc = 100 dissipation @ Tc = 25 |
PC |
56 |
W |
|
140 | |||
| Junction temperature |
Tj |
150 |
|
| Storage temperature range |
Tstg |
−55 to 150 |
GT50J327 Features
• Enhancement mode type
• High speed : tf = 0.19 s (typ.) (IC = 50A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(N) (Toshiba package name)
• High speed : tf = 0.19 s (typ.) (IC = 50A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(N) (Toshiba package name)
GT50G321
PDF/DataSheet Download
- Datasheet: GT50G321
- File Size: 294386 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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