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GT60J323
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DataSheet
General Description
GT60J323 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
| Collector-emitter voltage |
VCES |
600 |
V | |
| Gate-emitter voltage |
VEBS |
±25 |
V | |
| Collector current |
@ Tc = 100 |
IC |
33 |
A |
|
@ Tc = 25 |
ICP |
60 | ||
| Pulsed collector current |
ICP |
120 |
A | |
| Diode forward current |
DC |
IF |
30 |
A |
|
1 ms |
IFP |
120 | ||
| Collector power dissipation |
@ Tc = 100 |
PC |
68 |
W |
|
@ Tc = 25 |
170 | |||
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
-55 to 150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT60J323 Features
• Enhancement mode type
• High speed : tf = 0.16 s (typ.) (IC = 60A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(LH) (Toshiba package name)
GT605
PDF/DataSheet Download
- Datasheet: GT605
- File Size: 73488 KB
- Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
- Click here to Download
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