IGBT Transistors IGBT 1000V 57A
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1000 V | ||
| Maximum Gate Emitter Voltage : | 25 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-3P | Packaging : | Bulk |
| Technical/Catalog Information | GT60N322(Q) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Current - Collector (Ic) (Max) | 57A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Power - Max | 200W |
| Mounting Type | Through Hole |
| Package / Case | * |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | GT60N322 Q GT60N322Q |