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GT60N322(Q)

IGBT Transistors IGBT 1000V 57A

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SeekIC No. : 00143932 Detail

GT60N322(Q): IGBT Transistors IGBT 1000V 57A

GT60N322(Q) Data Sheet

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Part Number:
GT60N322(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1000 V
Maximum Gate Emitter Voltage : 25 V Maximum Operating Temperature : + 150 C
Package / Case : TO-3P Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1000 V
Maximum Gate Emitter Voltage : 25 V
Package / Case : TO-3P
Packaging : Bulk


Parameters:

Technical/Catalog InformationGT60N322(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)57A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max200W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT60N322 Q
GT60N322Q



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