GTLP16612 General Description
GTLP16612 Maximum Ratings
Supply Voltage (VCC, VCCQ) .......................−0.5V to +7.0V
DC Input Voltage (VI) ..................................−0.5V to +7.0V
DC Output Voltage (VO)
Outputs 3-STATE....................................... .. −0.5V to +7.0V
Outputs Active (Note 5) .......................−0.5V to VCC + 0.5V
DC Output Sink Current into
A-Port IOL ..................................................................64 mA
DC Output Source Current from
A-Port IOH ...............................................................−64 mA
DC Output Sink Current
into B-Port in the LOW State,
IOL ............................................................................80 mA
DC Input Diode Current (IIK)
VI< 0V ................................................................... .−50 mA
DC Output Diode Current (IOK)
VO < 0V ....................................................................−50 mA
VO > VCC .................................................................+50 mA
Storage Temperature (TSTG) ..................... −65 to +150
ESD Performance................................................... ...>2000V
GTLP16612 Features
Bidirectional interface between GTLP and TTL logiclevels
Designed with Edge Rate Control Circuit to reduceoutput noise
VREF pin provides external supply reference voltage forreceiver threshold
Submicron Core CMOS technology for low powerdissipation
Special PVT Compensation circuitry to provide consis-
tent performance over variations of process, supplyvoltage and temperature
5V tolerant inputs and outputs on A-Port
Bus-Hold data inputs on A-Port to eliminate the need for
external pull-up resistors for unused inputs
Power up/down high impedance
TTL compatible Driver and Control inputs
A-Port outputs source/sink −32 mA/+32 mA
Flow-through architecture optimizes PCB layout
Open drain on GTLP to support wired-or connection
GTLP16612 Connection Diagram
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