GTLP18T612 General Description
GTLP18T612 Maximum Ratings
Supply Voltage (VCC) .................................−0.5V to +4.6V
DC Input Voltage (VI) .............................. ..−0.5V to +4.6V
DC Output Voltage (VO)
Outputs 3-STATE ........................................−0.5V to +4.6V
Outputs Active (Note 5) .....................−0.5V to VCC + 0.5V
DC Output Sink Current into
A Port IOL .................................................................48 mA
DC Output Source Current from
A Port IOH ..............................................................−48 mA
DC Output Sink Current into
B Port in the LOW State, IOL ..................................100 mA
DC Input Diode Current (IIK)
VI< 0V .....................................................................−50 mA
DC Output Diode Current (IOK)
VO < 0V ..................................................................−50 mA
VO > VCC ................................................................+50 mA
ESD Performance ....................................................>2000V
Storage Temperature (TSTG)........................−65 to +150
GTLP18T612 Features
Bidirectional interface between GTLP and LVTTL logiclevels
Edge Rate Control to minimize noise on the GTLP port
Power up/down high impedance for live insertion
External VREF pin for receiver threshold
BiCMOS technology for low power dissipation
Bushold data inputs on A Port eliminates the need for
external pull-up resistors for unused inputs
LVTTL compatible Driver and Control inputs
Flow-through architecture optimizes PCB layout
Open drain on GTLP to support wired-or connection
A-Port source/sink −24 mA/+24 mA
B-Port sink capability +50 mA
D-type flip-flop, latch and transparent data paths
GTLP18T612 Connection Diagram
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