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H01N60J

Features: • 1A, 600V, RDS(on) =8@VGS=10V• Low Gate Charge 15nC(Typ.)• Low Crss 4pF(Typ.)• Fast Switching• Improved dv/dt CapabilitySpecifications Symbol Parameter H01N60I / H01N60J Units VDSSIDIDMVGSEASIAREARdv/dtVGSPDTj, TstgTL Drain-Source Vo...

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SeekIC No. : 004357369 Detail

H01N60J: Features: • 1A, 600V, RDS(on) =8@VGS=10V• Low Gate Charge 15nC(Typ.)• Low Crss 4pF(Typ.)• Fast Switching• Improved dv/dt CapabilitySpecifications Symbol Param...

H01N60J Data Sheet

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Part Number:
H01N60J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1A, 600V, RDS(on) =8@VGS=10V
• Low Gate Charge 15nC(Typ.)
• Low Crss 4pF(Typ.)
• Fast Switching
• Improved dv/dt Capability


Specifications

Symbol
Parameter
H01N60I / H01N60J
Units
VDSS
ID

IDM
VGS
EAS

IAR
EAR
dv/dt
VGS
PD


Tj, Tstg
TL
Drain-Source Voltage
Drain Current (Continuous TC=25)
Drain Current (Continuous TC=100)
Drain Current (Pulsed) *1
Gate-Source Voltage 
Single Pulse Avalanche Energy 
(L=59mH, IAS=1.1A, VDD=50V, RG=25, Starting TJ=25°C)
Avalanche Current *1
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt *2
Gate-to-Source Voltage (Continue) 
Total Power Dissipation (TA=25)
Total Power Dissipation (TC=25)
Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8"
from case for 5 seconds
600 
1 
0.6 
4 
±30 
50 

1 
2.8 
4.5 
±20 
2.5 
28 
0.22 
-55 to +150 
300 
V 
 A 
A 
A 
V 
mJ 

A 
mJ 
V/nS
 V 
W 
W 
W/°C
 °C 
°C 
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: ISD1.1A, di/dt200A/us, VDDBVDSS, Starting TJ=25


Description

This high voltage MOSFET H01N60J uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, H01N60J is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these H01N60J is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.




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