H01N60S

Features: • 1A, 600V, R DS(on)=12@VGS=10V• Low Gate Charge 15nC(Typ.)• Low Crss 4pF(Typ.)• Fast Switching• Improved dv/dt CapabilitySpecifications Symbol Parameter H01N60SI / H01N60SJ Units VDSS Drain-Source Voltage 600 V ID Drain...

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SeekIC No. : 004357370 Detail

H01N60S: Features: • 1A, 600V, R DS(on)=12@VGS=10V• Low Gate Charge 15nC(Typ.)• Low Crss 4pF(Typ.)• Fast Switching• Improved dv/dt CapabilitySpecifications Symbol Para...

floor Price/Ceiling Price

Part Number:
H01N60S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• 1A, 600V, R DS(on)=12@VGS=10V
• Low Gate Charge 15nC(Typ.)
• Low Crss 4pF(Typ.)
• Fast Switching
• Improved dv/dt Capability



Specifications

Symbol
Parameter
H01N60SI / H01N60SJ
Units
VDSS
Drain-Source Voltage
600
V
ID
Drain Current (Continuous TC=25°C)
1
A
Drain Current (Continuous TC=100°C)
0.6
A
IDM
Drain Current (Pulsed) *1
4
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
(L=59mH, IAS=1.1A, VDD=50V, RG=25, Starting TJ=25°C)
50
mJ
IAR
Avalanche Current *1
1
A
EAR
Repetitive Avalanche Energy
2.8
mJ
dv/dt
Peak Diode Recovery dv/dt *2
4.5
V/nS
VGS
Gate-to-Source Voltage (Continue)
±20
V
PD
Total Power Dissipation (TA=25°C)
2.5
W
Total Power Dissipation (TC=25°C)
28
W
Derate above 25°C
0.22
W/°C
Tj, Tstg
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering Purposes, 1/8"
from case for 5 seconds
300
°C
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: ISD1.1A, di/dt200A/us, VDDBVDSS, Starting TJ=25°C



Description

This high voltage MOSFET H01N60S uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. H01N60S is designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, H01N60S is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.




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