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H50N03E

Features: • RDS(on)=11m@VGS=10V, ID=30A• RDS(on)=18m@VGS=4.5V, ID=30A• Advanced trench process technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for DC/DC Converters and Motor Drivers• Fully Characterized Avalanche Voltage and ...

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H50N03E: Features: • RDS(on)=11m@VGS=10V, ID=30A• RDS(on)=18m@VGS=4.5V, ID=30A• Advanced trench process technology• High Density Cell Design for Ultra Low On-Resistance• Special...

H50N03E Data Sheet

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Part Number:
H50N03E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• RDS(on)=11m@VGS=10V, ID=30A
• RDS(on)=18m@VGS=4.5V, ID=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM


Specifications

Parameter Symbol Value Units
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 50 A
Pulsed Drain Current *1 IDM 200 A
Maximum Power Dissipation @ TC=25 PD 70 W
Operating Junction and Storage Temperature Range TJ,Tstg -55 to 150
Avalanche Energy with Single Pulse
ID=35A, VDD=20V, L=0.14mH		 EAS 300 mJ
Junction-to-Case Thermal Resistance RJC 2.1 /W
Junction-to-Ambient Thermal Resistance(PCB mounted)*2 RJA 55 /W
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board


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