Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±30 V Drain current ID 25 A Drain peak current ...
H5N2007FN: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V G...
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|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
200 |
V |
| Gate to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
25 |
A |
| Drain peak current |
I (pulse) Note1 |
100 |
A |
| Body-drain diode reverse drain current |
IDR |
25 |
A |
| Body-Drain diode reverse Drain peak current |
IDR (pulse)Note1 |
100 |
A |
| Avalanche current |
IAPNote3 |
9 |
A |
| Avalanche energy |
EARNote3 |
5.4 |
mJ |
| Channel dissipation |
PchNote2 |
30 |
W |
| Channel to case Thermal impedance |
ch-c |
4.17 |
/W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |