Features: • Low on-resistance• Low drive current• High speed switching• Low gate change• Avalanche ratingsSpecifications Item Symbol Value Unit Drain to source voltage VDSS 250 V Drain to source voltage VGSS ±30 V Drain current...
H5N2505DS: Features: • Low on-resistance• Low drive current• High speed switching• Low gate change• Avalanche ratingsSpecifications Item Symbol Value Unit Drain t...
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| Item |
Symbol |
Value |
Unit |
| Drain to source voltage |
VDSS |
250 |
V |
| Drain to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
5 |
A |
| Drain peak current |
ID(pulse) Note1 |
20 |
A |
| Body-drain diode reverse drain current |
IDR |
5 |
A |
| Body-drain diode reverse drain peak current |
IDR Note 1 |
20 |
A |
| Avalanche current |
IAP Note3 |
5 |
A |
| Channel dissipation |
Pch Note 2 |
25 |
W |
| Channel to Case Thermal Resistance |
ch-C |
5 |
/W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |