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H5N2508DS

Features: • Low on-resistance: R DS (on) = 0.48 typ.• Low leakage current: IDSS = 1 A max (at VDS = 250 V)• High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)• Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A)• Avalanch...

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SeekIC No. : 004357674 Detail

H5N2508DS: Features: • Low on-resistance: R DS (on) = 0.48 typ.• Low leakage current: IDSS = 1 A max (at VDS = 250 V)• High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = ...

H5N2508DS Data Sheet

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Part Number:
H5N2508DS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance: R DS (on) = 0.48 typ.
• Low leakage current: IDSS = 1 A max (at VDS = 250 V)
• High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)
• Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A)
• Avalanche ratings


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
VDSS
VGSS
ID
ID(pulse)
IDR
IDR(pulse)
IAP
Pch
ch-c
Tch
Tstg
250
±30
7
28
7
28
7
30
4.17
150
55 to +150
V
V
A
A
A
A
A
W
C/W
°C
°C



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