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H5N2512CF

Features: • Low on-resistance• Low leakage current• High Speed Switching• Built-in fast recovery diodeSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current I...

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SeekIC No. : 004357677 Detail

H5N2512CF: Features: • Low on-resistance• Low leakage current• High Speed Switching• Built-in fast recovery diodeSpecifications Parameter Symbol Rating Unit Drain to ...

H5N2512CF Data Sheet

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Part Number:
H5N2512CF
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High Speed Switching
• Built-in fast recovery diode


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID 18 A
Drain peak current ID(pulse)Note 1 72 A
Bodydrain diode reverse drain current IDR 18 A
Body-drain diode reverse drain peak current IDR(pulse)Note 1 72 A
Avalanche current IAPNote3 18 A
Channel dissipation
PchNote 2

35

 W
Channel to case Thermal Impedance ch-c 3.57 /W
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25 °C
3. Tch 150


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