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H5N2521FN

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Value Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current ID 3 A Drain peak curren...

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SeekIC No. : 004357683 Detail

H5N2521FN: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Value Unit Drain to source voltage VDSS 250 V ...

H5N2521FN Data Sheet

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Part Number:
H5N2521FN
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
3
A
Drain peak current
ID (pulse)
Note 1
6
A
Body to drain diode reverse drain current
IDR
3
A

 Body-drain diode reverse drain peak current

 IDR (pulse)
Note1

 6

 A

Avalanche current
IAPNote 3
6
A
Avalanche energy
EARNote 3
2.2
mJ
Channel dissipation
Pch Note 2
20
W

 Channel to case thermal impedance

 ch-c

 6.25

 /W

Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25
3. Value at Tch = 25, Rg 50


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