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H5N5005PL

Features: • Low on-resistance: RDS(on) = 0.070 typ.• Low leakage current: IDSS = 10 A max (at VDS = 500 V)• High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 )• Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)• Avalanc...

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SeekIC No. : 004357699 Detail

H5N5005PL: Features: • Low on-resistance: RDS(on) = 0.070 typ.• Low leakage current: IDSS = 10 A max (at VDS = 500 V)• High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8...

H5N5005PL Data Sheet

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Part Number:
H5N5005PL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance: RDS(on) = 0.070 typ.
• Low leakage current: IDSS = 10 A max (at VDS = 500 V)
• High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 )
• Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 220 ns typ


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Drain to source voltage
VGSS
±30
V
Drain current
ID
60
A
Drain peak current
ID(pulse) Note1
240
A
Body-drain diode reverse drain current
IDR
60
A
Body-Drain diode reverse Drain peak current
IDR (pulse) Note1
240
A
Avalanche current
IAP Note 3
30
A
Channel dissipation
Pch Note 2
270
W
Channel to case thermal impedance
ch-c
0.463
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150

Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tc = 25
            3. STch = 25°C, Tch 150  


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