Features: • Low on-resistance: RDS(on) = 2.5 typ.• Low leakage current: IDSS = 1 A max. (at VDS = 500 V)• High speed switching: tf = 15 ns typ. (at VGS = 10 V, VDD =250 V, ID = 1.5 A)• Low gate charge: Qg = 14 nC typ. (at VDD = 400 V, VGS = 10 V, ID = 3 A)• Avalanche...
H5N5006DS: Features: • Low on-resistance: RDS(on) = 2.5 typ.• Low leakage current: IDSS = 1 A max. (at VDS = 500 V)• High speed switching: tf = 15 ns typ. (at VGS = 10 V, VDD =250 V, ID = 1....
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Parameter | Symbol | Ratings | UNIT |
Drain to Source Voltage | VDSS | 500 | V |
Gate to Source Voltage | VGSS | ±30 | V |
Drain Current | ID | 3 | A |
Drain Current (Pulse) | ID(pulse) Note 1 |
12 | A |
Body-drain diode reverse drain current | IDR | 3 | A |
Body-drain diode reverse drain peak current | IDR(pulse) Note1 |
12 | A |
Avalanche current | IAPNote3 | 3 | A |
Channel dissipation | PchNote 2 | 30 | W |
Channel to case thermal impedance | ch-c | 4.17 | /W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | 55 to +150 |