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H5N5004PL

Features: • Low on-resistance: R DS (on) = 0.09 Ω typ.• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)• High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)• Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A...

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SeekIC No. : 004357698 Detail

H5N5004PL: Features: • Low on-resistance: R DS (on) = 0.09 Ω typ.• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)• High speed switching: tf = 280 ns typ (at VGS = 10 V, VD...

H5N5004PL Data Sheet

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Part Number:
H5N5004PL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance: R DS (on) = 0.09 Ω typ.
• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
• High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)
• Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 190 ns typ


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
50
A
Drain peak current
ID (pulse)Note 1
200
A
Body-drain diode reverse drain current
IDR
50
A
Body-drain diode reverse drain peak current
IDR (pulse)Note 1
200
A
Avalanche current
IAP Note 3
15
A
Channel dissipation
Pch Note 2
250
W
Channel to case thermal Impedance
ch-c
0.5
/W
Channel temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
           2. Value at Tc = 25
           3. Tch 150


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