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H5N5006LM

Features: • Low on-resistance• Low leakage current• High speed switching• Low gate charge• Avalanche ratingsSpecifications Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 3.5 A D...

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SeekIC No. : 004357703 Detail

H5N5006LM: Features: • Low on-resistance• Low leakage current• High speed switching• Low gate charge• Avalanche ratingsSpecifications Item Symbol Value Unit Drain to so...

H5N5006LM Data Sheet

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Part Number:
H5N5006LM
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge
• Avalanche ratings


Specifications

Item Symbol Value Unit
Drain to source voltage VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 3.5 A
Drain peak current ID (pulse) Note 1 14 A
Body-drain diode reverse drain current IDR 3.5 A
Channel to case thermal impedance ch-c 2.5 °C/W
Avalanche current IAP Note 3 3.5  
Channel dissipation Pch Note 2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25°C
3. Tch 150°C


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