H5N5007P Selling Leads, Price trend, H5N5007P DataSheet download, circuit diagram from SeekIC.com

Features: • Low on-resistance• Low leakage current• High speed switching• Low gate chargeSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS +30 V Drain current ID 25 A ...

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SeekIC No. : 004357705 Detail

H5N5007P: Features: • Low on-resistance• Low leakage current• High speed switching• Low gate chargeSpecifications Item Symbol Ratings Unit Drain to source voltage ...

H5N5007P Data Sheet

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Part Number:: H5N5007P
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

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15 Days

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Upload time: 2024/4/27

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Recent History
What is this?

H5N5001FM evaluate
Features: · Low on-resistance : RDS(on) =1.1W typ.· Low leakage current : IDSS =1mA max (at VDS = ...
H5N5004PL evaluate
Features: • Low on-resistance: R DS (on) = 0.09 Ω typ.• Low leakage current: IDS...
H5N5005PL evaluate
Features: • Low on-resistance: RDS(on) = 0.070 typ.• Low leakage current: IDSS = 10 A...

Product Details

Description

Features:

• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge

Specifications

Item	Symbol	Ratings	Unit
Drain to source voltage	V_DSS	500	V
Gate to source voltage	V_GSS	+30	V
Drain current	I_D	25	A
Drain peak current	I_D(pulse)^Note1	100	A
Body-drain diode reverse drain current	I_DR	25	A
Avalanche current	I_AP ^{Note 3}	7	A
Channel dissipation	P_ch^Note2	150	W
Channel to case thermal Impedance	_ch-c	0.833	/W
Channel temperature	T_ch	150
Storage temperature	T_stg	55 to +150

Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25
3. T_ch 150

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H5N5007P

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