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H5N5012P

Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 500 V Gate to Source voltage VGSS ±30 V Drain current ID ...

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SeekIC No. : 004357706 Detail

H5N5012P: Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to Sour...

H5N5012P Data Sheet

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Part Number:
H5N5012P
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching
• Built-in fast recovery diode


Specifications

Item
Symbol
Ratings
Unit
Drain to Source voltage
VDSS
500
V
Gate to Source voltage
VGSS
±30
V
Drain current
ID
25
A
Drain peak current
ID (pulse)Note1
100
A
Body-Drain diode reverse Drain current
IDR
25
A
Avalanche current
IAP Note3
7
A
Channel dissipation
Pch Note2
150
W
Channel to case thermal impedance
ch-c
0.833
/W
Channel temperature
Tch
150
Storage temperature
TSTG
55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
            2. Value at Tc = 25
            3. STch = 25, Tch 150


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