Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 500 V Gate to Source voltage VGSS ±30 V Drain current ID ...
H5N5012P: Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to Sour...
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Item |
Symbol |
Ratings |
Unit |
Drain to Source voltage |
VDSS |
500 |
V |
Gate to Source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
25 |
A |
Drain peak current |
ID (pulse)Note1 |
100 |
A |
Body-Drain diode reverse Drain current |
IDR |
25 |
A |
Avalanche current |
IAP Note3 |
7 |
A |
Channel dissipation |
Pch Note2 |
150 |
W |
Channel to case thermal impedance |
ch-c |
0.833 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
TSTG |
55 to +150 |