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H7N1005LM

Features: ` Low on-resistance RDS (on)= 85 m typ. ` Low drive current ` Capable of 4.5 V gate drive Specifications Item Symbol Value Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 15 A Drain p...

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H7N1005LM: Features: ` Low on-resistance RDS (on)= 85 m typ. ` Low drive current ` Capable of 4.5 V gate drive Specifications Item Symbol Value Unit Drain to source voltage VDSS 1...

H7N1005LM Data Sheet

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Part Number:
H7N1005LM
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

` Low on-resistance RDS (on) = 85 m typ.
` Low drive current
` Capable of 4.5 V gate drive


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
15
A
Drain peak current
ID(pulse)Note 1
30
A
Body to drain diode reverse drain current
IDR
30
A
Avalanche current
IAPNote 3
8
A
Avalanche energy
EARNote 3
6.4
mJ
Channel dissipation
PchNote 2
30
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150

Notes: 1. PW10s, duty cycle 1%
 2. Value at Tc = 25
 3. Value at Tch = 25, Rg 50


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